Junior RF Development Engineer-Chengdu, China
NXP Semiconductors N.V. (NASDAQ: NXPI) enables a smarter, safer and more sustainable world through innovation. As the world leader in secure connectivity solutions for embedded applications, NXP is pushing boundaries in the automotive, industrial & IoT, mobile, and communication infrastructure markets. Built on more than 60 years of combined experience and expertise, the company has approximately 31,000 employees in more than 30 countries and posted revenue of $11.06 billion in 2021.
Responsibilities:
- Develop discrete and integrated power transistors in package up to 6GHz for cellular, emerging, and RF power markets based on GaN, LDMOS and SiGe technology. Involves electromagnetic simulation, modeling and low impedance transistor internal and external matching networks, passive components and substrate simulation and layout.
- Design integrated passives, wire bonds, packaging interfaces and PCB board level matching. The design process uses a combination of measurement based techniques (e.g. loadpull and S parameter data, etc) and CAD software with the use of linear or non-linear models and design kits.
- Make use of Agilent’s ADS, Momentum, FEM, 3D and planar electromagnetic simulation tools. Work closely with global device&package engineers, product engineers, project managers, modeling engineers, thermal, application engineers and manufacturing personnel for successful and timely product introduction, and report to local management team.
Requirements
- 2022 Graduates with Master or above degree in RF, millimeter wave Engineering or relevant disciplines.
- Good knowledge on RF wave power transistors. Experience in GaN product development is preferred.
- Good knowledge on Agilent's Advanced Design System (ADS) and HFSS.
- Strong communication skills and ability to work with global teams. Good language skill in English.